Product Summary

The SSF5508 is a middle voltage and high current N-channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. The SSF5508 is assembled in high reliability and qualified assembly house. The application of the SSF5508 is Power switching.

Parametrics

SSF5508 absolute maximum ratings: (1)ID@Tc=25℃ Continuous drain current,VGS@10V: 110A; (2)ID@Tc=100℃ Continuous drain current,VGS@10V: 80A; (3)IDM Pulsed drain current: 400A; (4)PD@TC=25C?Power dissipation: 170W; (5)Linear derating factor: 2.0W/℃; (6)VGS Gate-to-Source voltage: ±20V; (7)dv/dt Peak diode recovery voltage: 31v/ns; (8)EAS Single pulse avalanche energy: 480mJ; (9)EAR Repetitive avalanche energy: TBD; (10)Operating Junction and Storage Temperature Range: -55 to +150℃.

Features

SSF5508 features: (1)Advanced trench process technology; (2)Ultra low Rdson, typical 6mohm; (3)High avalanche energy, 100% test; (4)Fully characterized avalanche voltage and current.

Diagrams

SSF5508 block diagram