(Hong Kong)
Product Summary
The IS42S16100A1-7T is a 16-Mb synchronous dynamic RAM. It is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
Parametrics
IS42S16100A1-7T absolute maximum ratings: (1)VDD MAX Maximum Supply Voltage:–1.0 to +4.6V; (2)VDDQ MAX Maximum Supply Voltage for Output Buffer:–1.0 to +4.6V; (3)VIN Input Voltage:–1.0 to +4.6V; (4)VOUT Output Voltage:–1.0 to +4.6V; (5)PD MAX Allowable Power Dissipation: 1W; (6)ICS Output Shorted Current: 50 mA; (7)TOPR Operating Temperature Com: 0 to +70℃; (8)Ind.: -40 to +85 °C; (9)TSTG Storage Temperature: –55 to +150℃.
Features
IS42S16100A1-7T features: (1)Clock frequency: 166, 143, 100 MHz; (2)Fully synchronous; all signals referenced to a positive clock edge; (3)Two banks can be operated simultaneously and independently; (4)Dual internal bank controlled by A11 (bank select); (5)Single 3.3V power supply; (6)LVTTL interface; (7)Programmable burst length; (8)(1, 2, 4, 8, full page); (9)Programmable burst sequence: Sequential/Interleave; (10)Auto refresh, self refresh; (11)4096 refresh cycles every 64 ms; (12)Random column address every clock cycle; (13)Programmable CAS latency (2, 3 clocks); (14)Burst read/write and burst read/single write operations capability; (15)Burst termination by burst stop and precharge command; (16)Byte controlled by LDQM and UDQM; (17)Package 400-mil 50-pin TSOP II; (18)Lead-free package option.
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