Product Summary
The IRFL9110 is a power MOSFET. The IRFL9110 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
Parametrics
IRFL9110 absolute maximum ratings: (1)Drain-Source Voltage VDS: 100V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current VGS at -10V TC = 25℃ ID: -1.1A; (4)TC = 100℃: -0.69A; (5)Pulsed Drain Current IDM: -8.8A; (6)Linear Derating Factor: 0.025W/℃; (7)Linear Derating Factor (PCB Mount)e: 0.017W/℃; (8)Single Pulse Avalanche Energy EAS: 100mJ; (9)Avalanche Current IAR: -1.1A; (10)Peak Diode Recovery dV/dtc EAR: 0.31mJ; (11)Maximum Power Dissipation TC = 25℃ PD: 3.1W; (12)Maximum Power Dissipation (PCB Mount)e TA = 25℃: 2.0W; (13)Peak Diode Recovery dV/dtc dV/dt: -5.5V/ns; (14)Operating Junction and Storage Temperature Range TJ, Tstg: -55℃ to + 150℃; (15)Soldering Recommendations (Peak Temperature) for 10s 300d ℃.
Features
IRFL9110 features: (1)Surface Mount; (2)Available in Tape and Reel; (3)Dynamic dV/dt Rating; (4)Repetitive Avalanche Rated; (5)P-Channel; (6)Fast Switching; (7)Ease of Paralleling; (8)Lead (Pb)-free Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFL9110 |
Vishay/Siliconix |
MOSFET P-Chan 100V 1.1 Amp |
Data Sheet |
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IRFL9110, SiHFL9110 |
Other |
Data Sheet |
Negotiable |
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IRFL9110TRPBF |
Vishay/Siliconix |
MOSFET P-Chan 100V 1.1 Amp |
Data Sheet |
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IRFL9110PBF |
Vishay/Siliconix |
MOSFET P-Chan 100V 1.1 Amp |
Data Sheet |
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IRFL9110TR |
Vishay/Siliconix |
MOSFET P-Chan 100V 1.1 Amp |
Data Sheet |
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