IRF7401

IRF7401, HEXFET Power MOSFET, SMD, 10A, 2.5W, ±12V

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Price:: US $0.01~2.00 / piece [Get Latest Price]

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PartNumber:: IRF7401

Brand:: International Rectifier - IR | Pack: SMD | D/C: 12+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2012-12-07

From Other Seller

Part Number:IRF7401
US $0.01 - 2.00
74AHC2G08VS SOP-8

US $2.00 - 2.00 / Piece
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HCPL-7800A

US $2.50 - 4.10 / Piece
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Product Summary

The IRF7401 is a HEXFET Power MOSFET. The IRF7401 utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making the IRF7401 ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Parametrics

IRF7401 absolute maximum ratings: (1)ID @ TA = 25℃ 10 Sec. Pulsed Drain Current, VGS @ 4.5V: 10A; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ 4.5V: 8.7A; (3)ID @ TA = 70℃ Continuous Drain Current, VGS @ 4.5V: 7.0A; (4)IDM Pulsed Drain Current: 35A; (5)PD @TA = 25℃ Power Dissipation: 2.5W; (6)Linear Derating Factor: 0.02W/℃; (7)VGS Gate-to-Source Voltage: ±12V; (8)dv/dt Peak Diode Recovery dv/dt: 5.0V/ns; (9)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150℃.

Features

IRF7401 features: (1) Generation V Technology; (2)Ultra Low On-Resistance; (3)N-Channel Mosfet; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.