Product Summary
The BSS138N is an N–channel power MOSFET. Its typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, and PCMCIA cards, cellular and cordless telephones.
Parametrics
BSS138N absolute maximum ratings: (1) Drain–to–Source Voltage. VDSS: 50Vdc; (2)Gate–to–Source Voltage – Continuous, VGS: ± 20Vdc; (3)Drain Current: – Continuous @ TA = 25℃, ID: 200mA; – Pulsed Drain Current (tp 3 10 ms): IDM: 800mA; (4)Total Power Dissipation @ TA = 25℃, PD: 225mW; (5)Operating and Storage Temperature Range, TJ, Tstg: – 55 to 150℃ ; (6)Thermal Resistance – Junction–to–Ambient, RθJA: 556℃ /W; (7)Maximum Lead Temperature for Soldering Purposes, for 10 seconds, TL: 260℃.
Features
BSS138N features: (1) Low Threshold Voltage (VGS (th): 0.5V to 1.5V) makes it ideal for low voltage applications; (2) Miniature SOT–23 Surface Mount Package saves board space.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BSS138N |
Other |
Data Sheet |
Negotiable |
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BSS138N E6433 |
MOSFET N-CH 60V 230MA SOT-23 |
Data Sheet |
Negotiable |
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BSS138N H6327 |
Infineon Technologies |
MOSFET N-KANAL SMALL SIGNAL MOS |
Data Sheet |
|
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BSS138N E6908 |
MOSFET N-CH 60V 230MA SOT-23 |
Data Sheet |
Negotiable |
|
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BSS138N E7854 |
MOSFET N-CH 60V 230MA SOT-23 |
Data Sheet |
Negotiable |
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BSS138N E8004 |
MOSFET N-CH 60V 230MA SOT-23 |
Data Sheet |
Negotiable |
|
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BSS138N L6327 |
Infineon Technologies |
MOSFET N-CH 60V 0.23A |
Data Sheet |
Negotiable |
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BSS138N L6433 |
Infineon Technologies |
MOSFET SIPMOS Sm-Signal Transistor 60V .23A |
Data Sheet |
Negotiable |
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