(Hong Kong)
Product Summary
The AS7C31024B-20TCTR is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. The AS7C31024B-20TCTR is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Parametrics
AS7C31024B-20TCTR absolute maximum ratings: (1)Voltage on VCC relative to GND Vt1: -0.50 to +5.0 V; (2)Voltage on any pin relative to GND Vt2: –0.50 to VCC +0.50 V; (3)Power dissipation PD: 1.0W; (4)Storage temperature (plastic) Tstg: –65 to +150℃; (5)Ambient temperature with VCC applied Tbias: –55 to +125℃; (6)DC current into outputs (low) IOUT: 20mA.
Features
AS7C31024B-20TCTR features: (1)Industrial and commercial temperatures; (2)Organization: 131,072 words x 8 bits; (3)High speed; (4)Low power consumption: ACTIVE 252 mW / max @ 10 ns; (5)Low power consumption: STANDBY 18 mW / max CMOS; (6)6T 0.18u CMOS technology; (7)Easy memory expansion with CE1, CE2, OE inputs; (8)TTL/LVTTL-compatible, three-state I/O; (9)32-pin JEDEC standard packages; (10)ESD protection ≥2000 volts; (11)Latch-up current ≥200mA.
Diagrams
