Product Summary

The BSM75GB170DN2 is an IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate).

Parametrics

BSM75GB170DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1700 V; (2)Collector-gate voltage: 1700 V; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 110A; (5)Pulsed collector current: 220A; (6)Power dissipation per IGBT: 625W; (7)Chip temperature: +150℃; (8)Storage temperature: -55~ +150℃.

Features

BSM75GB170DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)RG on,min = 22 Ohm.

Diagrams

BSM75GB170DN2 Circuit Diagram