W29C040-90B

EEPROM, 4-megabit, 5-volt, DIP, 20mA, W29C040-90B, Winbond, 90/120ns

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.01~6.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.01~6.00

PartNumber:: W29C040-90B

Brand:: Winbond - Winbond | Pack: DIP | D/C: 12+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. elaine's store

(Hong Kong)

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-11-05

From Other Seller

Part Number:W29C040-90B
US $0.01 - 6.00
ECA1HHG4R7

US $10.00 - 10.00 / Piece
(0) Remove
ECA1HHG220

US $2.00 - 10.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The W29C040-90B is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K× 8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A12-volt VPP is not required. The unique cell architecture of the W29C040-90B results in fast write (erase/program) operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The W29C040-90B can also be written (erased and programmed) by using standard EPROM programmers.

Parametrics

W29C040-90B absolute maximum ratings: (1)Power Supply Voltage to Vss Potential: -0.5 to +7.0 V; (2)Operating Temperature: 0 to +70℃; (3)Storage Temperature: -65 to +150℃; (4)D.C. Voltage on Any Pin to Ground Potential Except A9: -0.5 to VDD +1.0 V; (5) Transient Voltage (<20nS) on Any Pin to Ground Potential: -1.0 to VDD +1.0 V; (6) Voltage on A9 and OE Pin to Ground Potential: -0.5 to 12.5 V.

Features

W29C040-90B features: (1)Single 5-volt write (erase and program) operations; (2)Fast page-write operations, 256 bytes per page, Page write (erase/program) cycle: 5mS (typ.), Effective byte-write (erase/program) cycle time: 19.5mS, Optional software-protected data write; (3)Fast chip-erase operation: 50mS; (4)Two 16 KB boot blocks with lockout; (5)Typical page write (erase/program) cycles: 1K/10K (typ.); (6)Read access time: 90/120nS; (7)Ten-year data retention; (8)Software and hardware data protection; (9)Low power consumption: Active current: 25mA (typ.), Standby current: 20mA (typ.); (10)Automatic write (erase/program) timing with internal VPP generation; (11)End of write (erase/program) detection: Toggle bit, Data polling; (12)Latched address and data; (13)All inputs and outputs directly TTL compatible; (14)JEDEC standard byte-wide pinouts; (15)Available packages: TSOP and PLCC.