(Hong Kong)
Product Summary
The PDTC143ET is an NPN resistor-equipped transistor in a SOT23 plastic package. The applications of the PDTC143ET include especially suitable for space reduction in interface and driver circuits, Inverter circuit configurations without use of external resistors.
Parametrics
PDTC143ET absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 50 V; (2)VCEO collector-emitter voltage open base: 50 V; (3)VEBO emitter-base voltage open collector: 10 V; (4)VI input voltage positive: 30 V; (5)negative: 10 V; (6)IO output current (DC): 100mA; (7)ICM peak collector current: 100mA; (8)Ptot total power dissipation Tamb≤25℃; note 1: 250mW; (9)Tstg storage temperature: -65 to +150℃; (10)Tj junction temperature: -150℃; (11)Tamb operating ambient temperature: -65 to +150℃.
Features
PDTC143ET features: (1)Built-in bias resistors R1 and R2 (typ. 4.7kΩ each); (2)Simplification of circuit design; (3)Reduces number of components and board space.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 PDTC143ET |
Other |
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Data Sheet |
Negotiable |
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PDTC143ET /T3 |
NXP Semiconductors |
Transistors Switching (Resistor Biased) TRANS RET TAPE-11 |
Data Sheet |
Negotiable |
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PDTC143ET,215 |
NXP Semiconductors |
Transistors Switching (Resistor Biased) TRANS RET TAPE-7 |
Data Sheet |
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PDTC143ET,235 |
NXP Semiconductors |
Transistors Switching (Resistor Biased) TRANS RET TAPE-11 |
Data Sheet |
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