Product Summary

The IS61LV12816L-10TL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The IS61LV12816L-10TL is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. The IS61LV12816L-10TL is packaged in the JEDEC standard 44-pin TSOP (Type II), 44-pin LQFP, and 48-pin mini BGA
(6mm x 8mm).

Parametrics

IS61LV12816L-10TL absolute maximum ratings: (1)VDD Power Supply Voltage Relative to GND: –0.5 to 4.0V V; (2)VTERM Terminal Voltage with Respect to GND: –0.5 to VDD + 0.5V; (3)TSTG Storage Temperature: –65 to + 150℃; (4)PT Power Dissipation: 1.0W.

Features

IS61LV12816L-10TL features: (1)High-speed access time: 8, 10 ns; (2)Operating Current: 50mA (typ.); (3)Stand by Current: 700μA (typ.); (4)TTL and CMOS compatible interface levels; (5)Single 3.3V power supply; (6)Fully static operation: no clock or refresh required; (7)Three state outputs; (8)Data control for upper and lower bytes; (9)Industrial temperature available; (10)Lead-free available.

Diagrams

IS61LV12816L-10TL block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IS61LV12816L-10TL
IS61LV12816L-10TL
ISSI
SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
Data Sheet
0-1: $2.74
1-25: $2.60
25-100: $2.38
100-500: $2.30
IS61LV12816L-10TLI
IS61LV12816L-10TLI
ISSI
SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
Data Sheet
0-270: $2.42
270-540: $2.27
540-1080: $2.18
1080-2160: $2.11
IS61LV12816L-10TL-TR
IS61LV12816L-10TL-TR
ISSI
SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
Data Sheet
0-1000: $2.18
1000-2000: $2.16
IS61LV12816L-10TLI-TR
IS61LV12816L-10TLI-TR
ISSI
SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
Data Sheet
0-1000: $2.18
1000-2000: $2.11