Product Summary
The C5027-R is an NPN Silicon Transistor.
Parametrics
C5027-R absolute maximum ratings: (1)VCBO Collector-Base Voltage: 1100V; (2)VCEO Collector-Emitter Voltage: 800V; (3)VEBO Emitter-Base Voltage: 7V; (4)IC Collector Current (DC): 3A; (5)ICP Collector Current (Pulse): 10A; (6)IB Base Current: 1.5A; (7)PC Collector Dissipation ( TC=25℃): 50W; (8)TJ Junction Temperature: 150℃; (9)TSTG Storage Temperature: - 55 to 150℃.
Features
C5027-R features: (1)High Speed Switching; (2)Wide SOA.
Diagrams
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![]() C502 |
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![]() Negotiable |
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![]() C5025.38.01 |
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![]() 1C14W RG11/U 97% BC BLK PE JKT |
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![]() C5025.41.01 |
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![]() CABLE RG 11/U 95% BRD BLK |
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![]() C5025.43.01 |
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![]() 1C14W RG11/U 97% BC BLK PE JKT |
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![]() C5027.38.01 |
![]() General Cable/Carol Brand |
![]() 1C/14 RG11/U TRIAXIAL 500' |
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![]() C5029.41.01 |
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![]() 1C/14 RG11/U FL CL2/CM 1000' |
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