(Hong Kong)
Product Summary
The BUV48C is an NPN silicon power transistor.
Parametrics
BUV48C absolute maximum ratings: (1)Collector-emitter voltage (VBE = 0V): 850V; (2)Collector-emitter voltage (RBE = 10Ω): 850V; (3)Collector-emitter voltage (IB = 0): 400V; (4)Continuous collector current IC: 15A; (5)Peak collector current ICM: 30A; (6)Continuous base current IB: 4A; (7)Peak base current IBM: 20A; (8)Non repetitive accidental peak surge current ICSM: 55A; (9)Continuous device dissipation at (or below) 25℃ case temperature Ptot: 125W; (10)Operating junction temperature range Tj: -65℃ to +150℃; (11)Storage temperature range Tstg: -65℃ to +150℃.
Features
BUV48C features: (1) Rugged Triple-Diffused Planar Construction; (2)15A Continuous Collector Current; (3)1000 Volt Blocking Capability.
Diagrams
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Pricing (USD) |
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 BUV48CFI |
Other |
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Data Sheet |
Negotiable |
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BUV48C |
Other |
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Data Sheet |
Negotiable |
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