(Hong Kong)
Product Summary
The BCP56 is a 1A NPN medium power transistor in a SOT223 plastic package. The application of it is switching.
Parametrics
BCP56 absolute maximum ratings: (1)emitter-base voltage open collector:5V; (2)collector current (DC):1A; (3)peak collector current:1.5A; (4)peak base current:0.2A; (5)total power dissipation Tamb ≤ 25℃:1.33W; (6)storage temperature:-65℃ to +150℃; (7)junction temperature:150℃; (8)operating ambient temperature:-65℃ to +150℃; (9) Collector-base voltage: 100V; (10)collector-emitter voltage:80V.
Features
BCP56 features: (1) High current (max. 1 A); (2) Low voltage (max. 80 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||
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 BCP56,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) NPN MED 1A 80V |
Data Sheet |
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BCP56_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-223 NPN GP AMP |
Data Sheet |
Negotiable |
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BCP56-10 |
Other |
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Data Sheet |
Negotiable |
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BCP56-10,135 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
Data Sheet |
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BCP56-16 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Medium Voltage |
Data Sheet |
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BCP56-16,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) NPN 80V 1A |
Data Sheet |
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BCP56-16,135 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
Data Sheet |
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BCP56T1G |
ON Semiconductor |
Transistors Bipolar (BJT) 1A 100V NPN |
Data Sheet |
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