Product Summary

The APM4301 is a P-Channel Enhancement Mode MOSFET. The applications of the APM4301 include Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.

Parametrics

APM4301 absolute maximum ratings: (1)VDSS Drain-Source Voltage: -30V; (2)VGSS Gate-Source Voltage: ±25V; (3)ID* Continuous Drain Current -15; (4)IDM* Pulsed Drain Current VGS=-10V: -50A; (5)IS* Diode Continuous Forward Current: -3A; (6)TJ Maximum Junction Temperature 150℃; (7)TSTG Storage Temperature Range -55 to 150℃; (8)PD* Maximum Power Dissipation TA=25℃: 2W; (9)PD* Maximum Power Dissipation TA=100℃ 0.8W; (10)RθJA* Thermal Resistance-Junction to Ambient: 62.5℃/W.

Features

APM4301 features: (1)-30V/-15A,; (2)RDS(ON)= 5.5mΩ (typ.) @ VGS=-20V; (3)RDS(ON)= 6mΩ (typ.) @ VGS=-10V; (4)RDS(ON)= 10mΩ (typ.) @ VGS=-4.5V; (5)Super High Dense Cell Design; (6)Reliable and Rugged; (7)ESD Rating : 3KV HBM; (8)Lead Free and Green Devices Available (RoHS Compliant).

Diagrams

APM4301 block diagram

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