74HCT14D

74HCT14D, Si-gate CMOS device, soic14, -0.5V to +7V, ±20mA, 500mW

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PartNumber:: 74HCT14D

Brand:: NXP Semiconductors - nxp | Pack: SOIC | D/C: 12+

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Products Upload time: 2012-10-29

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Product Summary

The 74HCT14D is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). It is specified in compliance with JEDEC standard no. 7A. The 74HCT14D provides six inverting buffers with Schmitt-trigger action. It is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.

Parametrics

74HCT14D absolute maximum ratings: (1)supply voltage: -0.5V to +7V; (2)input diode current: ±20mA at VI < -0.5 V or VI > VCC + 0.5 V; (3)output diode current: ±20mA at VO < -0.5 V or VO > VCC + 0.5 V; (4)output source or sink current: ±25mA at -0.5 V < VO < VCC + 0.5 V; (5)VCC or GND current: 50mA; (6)storage temperature: -65 to +150 ℃; (7)power dissipation Tamb = -40 to +125 ℃: DIP14 packages: 750mW, Other packages: 500mW.

Features

74HCT14D features: (1) Applications: Wave and pulse shapers, Astable multivibrators, Monostable multivibrators; (2) Complies with JEDEC standard no. 7A; (3) ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V, MM EIA/JESD22-A115-A exceeds 200 V.; (4) Specified from -40 to +85 ℃ and -40 to +125 ℃.