(Hong Kong)
Product Summary
The 2N5551 is an Amplifier Transistor.
Parametrics
2N5551 absolute maximum ratings: (1)Collector - Emitter Voltage, VCEO: 140 to 160 Vdc; (2)Collector - Base Voltage, VCBO: 160 to 180 Vdc; (3)Emitter - Base Voltage, VEBO: 6.0 Vdc; (4)Collector Current - Continuous, IC: 600 mAdc; (5)Total Device Dissipation, PD: 625mW; (6)Operating and Storage Junction Temperature Range, TJ, Tstg: -55 to +150℃.
Features
2N5551 features: (1)Pb-Free Packages are Available; (2)Device Marking: Device Type.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 2N5551 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS HV TAPE WIDE PITCH |
Data Sheet |
Negotiable |
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2N5551_D26Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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2N5551_J05Z_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5551-A |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) 600mA 160V |
Data Sheet |
Negotiable |
|
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 |
2N5551RLRAG |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 180V NPN |
Data Sheet |
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2N5551RL1G |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 180V NPN |
Data Sheet |
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2N5551G |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 180V NPN |
Data Sheet |
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2N5551BU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
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