Product Summary

The MG25Q1BS11 is an N-CHANNEL IGBT module. It is used in high power switching and motor control applications.

Parametrics

MG25Q1BS11 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)gate-emitter voltage: ±20V; (3)collector current-DC: 25A; (4)collector current-Ims: 50A; (5)collector power dissipation: 150W; (6)junction temperature: 150℃; (7)storage temperature range: -40~125℃; (8)isolation voltage: 2500V; (9)screw torque:2/3N·m.

Features

MG25Q1BS11 features: (1)high input impedance; (2)high speed; (3)low saturation voltage; (4)enhancement-mode; (5)the electrodes are isolated from case.

Diagrams

MG25Q1BS11 equivalent circuit