Product Summary
The BSM100GB170DN2 is an IGBT Power Module(Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate).
Parametrics
BSM100GB170DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1700 V; (2)Collector-gate voltage: 1700 V; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 145A; (5)Pulsed collector current: 290A; (6)Chip temperature: +150℃; (7)Storage temperature: -55~ +150℃.
Features
BSM100GB170DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)RG on,min = 15 Ohm.
Diagrams
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![]() BSM100GB170DN2 |
![]() Infineon Technologies |
![]() IGBT Modules 1700V 100A DUAL |
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![]() BSM100GAL120DLCK |
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![]() IGBT Modules 1200V 100A CHOPPER |
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![]() BSM100GAL120DN2 |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A CHOPPER |
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![]() Negotiable |
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![]() BSM100GAR120DN2 |
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![]() Negotiable |
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![]() BSM100GB120DLC |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
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![]() BSM100GB120DLCK |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
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![]() |
![]() BSM100GB120DN2 |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
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