Product Summary
The cy7c1021cv is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. The cy7c1021cv has an automatic power-down feature that significantly reduces power consumption when deselected. The cy7c1021cv is available in standard 44-pin TSOP Type II and 400-mil-wide SOJ packages.
Parametrics
cy7c1021cv absolute maximum ratings: (1)Storage Temperature:–65℃ to +150℃; (2)Ambient Temperature with Power Applied:–55℃ to +125℃; (3)Supply Voltage on VCC to Relative GND:–0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State:–0.5V to VCC+0.5V; (5)DC Input Voltage:–0.5V to VCC+0.5V; (6)Current into Outputs (LOW): 20mA; (7)Static Discharge Voltage: >2001V (per MIL-STD-883, Method 3015); (8)Latch-Up Current: >200mA.
Features
cy7c1021cv features: (1)High speed tAA = 12 ns; (2)CMOS for optimum speed/power; (3)Low active power 1320mW (max.); (4)Automatic power-down when deselected; (5)Independent Control of Upper and Lower bits; (6)Available in 44-pin TSOP II and 400-mil SOJ.
Diagrams
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![]() CY7C1021CV26 |
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![]() Negotiable |
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![]() CY7C1021CV26-15BAE |
![]() Cypress Semiconductor |
![]() SRAM 64K X 16 2.6V |
![]() Data Sheet |
![]() Negotiable |
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![]() CY7C1021CV26-15ZSXE |
![]() Cypress Semiconductor |
![]() SRAM 64K X 16 2.6V |
![]() Data Sheet |
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![]() CY7C1021CV26-15VXE |
![]() Cypress Semiconductor |
![]() SRAM 64K X 16 2.6V |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() CY7C1021CV26-15VXET |
![]() Cypress Semiconductor |
![]() SRAM 64K X 16 2.6V |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() CY7C1021CV26-15BAET |
![]() Cypress Semiconductor |
![]() SRAM 64K X 16 2.6V |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() CY7C1021CV26-15ZSXET |
![]() Cypress Semiconductor |
![]() SRAM 64K X 16 2.6V |
![]() Data Sheet |
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![]() |
![]() CY7C1021CV26-15ZXE |
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![]() IC SRAM 1MBIT 15NS 44TSOP |
![]() Data Sheet |
![]() Negotiable |
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