(Hong Kong)
Product Summary
The MMBT5551LT1 is a high voltage transistor.
Parametrics
MMBT5551LT1 absolute maximum ratings: (1)Collector-emitter voltage, VCEO: 160Vdc; (2)Collector-base voltage, VCBO: 180Vdc; (3)Emitter-base voltage, VEBO: 6Vdc; (4)Collector current-continuous, IC: 600mAdc; (5)Electrostatic discharge, ESD: >8000V.
Features
MMBT5551LT1 features: (1)AEC-Q101 qualified and PPAP capable; (2)S prefix for automotive and other applications requiring unique site and control change requirements; (3)These devices are Pb-free, Halogen Free/BFR free and are RoHS compliant.
Diagrams
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 MMBT5551LT1 |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 160V NPN |
Data Sheet |
Negotiable |
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MMBT5551LT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 160V NPN |
Data Sheet |
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