Product Summary

The LMBT5551LT1G is a high voltage transistor.

Parametrics

LMBT5551LT1G absolute maximum ratings: (1) Collector-Emitter Voltage: 160V; (2) Collector-Base Voltage: 180V; (3) Emitter-Base Voltage VEBO: 6.0Vdc; (4) Collector Current - Continuous IC: 600mAdc.

Features

LMBT5551LT1G feature: (1) we declare that the material of product compliance with RoHS requirements.

Diagrams

LMBT5551LT1G block diagram

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