Product Summary
The LMBT5551LT1G is a high voltage transistor.
Parametrics
LMBT5551LT1G absolute maximum ratings: (1) Collector-Emitter Voltage: 160V; (2) Collector-Base Voltage: 180V; (3) Emitter-Base Voltage VEBO: 6.0Vdc; (4) Collector Current - Continuous IC: 600mAdc.
Features
LMBT5551LT1G feature: (1) we declare that the material of product compliance with RoHS requirements.
Diagrams
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![]() LMBT5551LT1G |
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![]() LMBT2222ADW1T1G |
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![]() LMBT2222ALT1G |
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![]() LMBT2222ATT1G |
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![]() LMBT2222AWT1G |
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![]() LMBT2369ALT1G |
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![]() Negotiable |
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![]() LMBT2369LT1G |
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![]() Negotiable |
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