Product Summary
The IRF6215STRLPBF is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF6215STRLPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF6215STRLPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ -10V: -13A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ -10V: -9.0A; (3)IDM Pulsed Drain Current: -44A; (4)PD @TA = 25℃ Power Dissipation: 3.8W; (5)PD @TC = 25℃ Power Dissipation: 110W; (6)Linear Derating Factor: 0.71 W/℃; (7)VGS Gate-to-Source Voltage: ±20V; (8)EAS Single Pulse Avalanche Energy: 310mJ; (9)IAR Avalanche Current: -6.6A; (10)EAR Repetitive Avalanche Energy: 11mJ; (11)dv/dt Peak Diode Recovery dv/dt: -5.0V/ns; (12)TJ Operating Junction and TSTG Storage Temperature Range: -55 to + 175℃; (13)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case ).
Features
IRF6215STRLPBF features: (1)Advanced Process Technology; (2)Surface Mount (IRF6215S); (3)Low-profile through-hole (IRF6215L); (4)175℃ Operating Temperature; (5)Fast Switching; (6)P-Channel; (7)Fully Avalanche Rated.
Diagrams
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![]() IRF6215STRLPBF |
![]() International Rectifier |
![]() MOSFET MOSFT PCh -150V -13A 290mOhm 44nC |
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