(Hong Kong)
Product Summary
The 2N5401 is a PNP high-voltage transistor. The applications of the 2N5401 include General purpose switching and amplification, Telephony applications.
Parametrics
2N5401 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 160 V; (2)VCEO collector-emitter voltage open base: 150 V; (3)VEBO emitter-base voltage open collector: 5 V; (4)IC collector current (DC): 300 mA; (5)ICM peak collector current: 600 mA; (6)IBM peak base current: 100 mA; (7)Ptot total power dissipation Tamb≤25℃: 630mW; (8)Tstg storage temperature: -65 to +150℃; (9)Tj junction temperature: 150℃; (10)Tamb operating ambient temperature: -65 to +150℃.
Features
2N5401 features: (1)Low current (max. 300 mA); (2)High voltage (max. 150 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2N5401,116 |
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TRANSISTOR PNP 150V 300MA TO-92 |
Data Sheet |
Negotiable |
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2N5401_D10Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
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2N5401_D26Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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2N5401_D27Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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2N5401_D29Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
|
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|
2N5401_D74Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
|
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2N5401_D81Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
|
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|
2N5401_J05Z_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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