Product Summary
The BSM100GP60 is an IGBT-Module.
Parametrics
BSM100GP60 absolute maximum ratings: (1)repetitive peak reverse voltage: 1200 V; (2)RMS forward current per chip: 40 A; (3)DC forward current: 10 A at TC = 80℃; (4)surge forward current: 300 A at tP = 10 ms, Tvj = 25℃, 230 A at tP = 10 ms, Tvj = 150℃; (5)I2t - value: 450 A2s at tP = 10 ms, Tvj = 25℃, 260 A2s at tP = 10 ms, Tvj = 150℃.
Features
BSM100GP60 features: (1)internal insulation: Al2O3; (2)comperative tracking index: 225; (3)mounting torque: 3±10% Nm; (4)weight: 180g.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BSM100GP60 |
Infineon Technologies |
IGBT Modules 600V 100A PIM |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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