Product Summary

The KM684000L6-7 is a 4194304 bit high speed static random access memory organized ad 524288 words by 8 bits. The KM684000L6-7 is fabricated using Samsung’s advanced CMOS process. The KM684000L6-7 has an output enable input for precise control of the data outputs. It also has chip enable inputs for the minimum current power down mode. The KM684000L6-7 has been designed for high speed and low power applications. It is particularly well suited for battery back-up nonvolatile memory application.

Parametrics

KM684000L6-7 absolute maximum ratings: (1)Voltage on any pin relative to VSS: -0.5V to 7.0V; (2)Voltage on VCC supply relative to VSS: -0.5V to 7.0V; (3)Power Dissipation: 1.0W; (4)Storage Temperature: -55 to 150℃; (5)Operating Temperature: 0 to 70℃.

Features

KM684000L6-7 features: (1)Fast Access Time: 55, 70ns (Max.); (2)low Power Dissipation Standby (CMOS): 550uW (Max.) L Version; (3)Single 5V±10% power supply; (4)TTL compatible inputs and outputs; (5)Three state outputs; (6)Battery back-up operation; (7)Bata retention voltage: 2V (Min.); (8)Standard Pin Configuration.

Diagrams

KM684000L6-7 block diagram

KM68V257ELI
KM68V257ELI

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KM68V257EL
KM68V257EL

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KM68V257EI
KM68V257EI

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Negotiable 
KM68V257E
KM68V257E

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KM68V257C
KM68V257C

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Negotiable 
KM68V1000B
KM68V1000B

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Negotiable