Product Summary

The IRF7303 is a HEXFET power MOSFET. The IRF7303 utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Parametrics

IRF7303 absolute maximum ratings: (1)ID @ TA=25℃ 10 Sec. Pulsed Drain Current, VGS @10V: 5.3A; (2)ID @ TA=25℃ Continuous Drain Current, VGS @10V: 4.9A; (3)ID @ TA=70℃ Continuous Drain Current, VGS @10V: 3.9A; (4)IDM Pulsed Drain Current: 20A; (5)PD @ TA=25℃ Power Dissipation: 2.0W; (6)PD @ TA=25℃ Linear Derating Factor: 0.016W/℃; (7)VGS Gate-to-Source Voltage: ±20V; (8)dv/dt Peak Diode Recovery dv/dt: 5.0V/ns; (9)Junction and Storage Temperature Range: -55℃ to 150℃.

Features

IRF7303 features: (1)Generation V Technology; (2)Ultra Low On-resistance; (3)Dual N-channel Mosfet; (4)Surface Mount; (5)Available in Tape and Reel ; (6)Dynamic dv/dt Rating; (7)Fast Switching; (8)Lead-Free.

Diagrams

IRF7303 Pin Configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF7303
IRF7303

Other


Data Sheet

Negotiable 
IRF7303PBF
IRF7303PBF

International Rectifier

MOSFET

Data Sheet

0-1: $0.72
1-25: $0.44
25-100: $0.30
100-250: $0.26
IRF7303QPBF
IRF7303QPBF

International Rectifier

MOSFET

Data Sheet

Negotiable 
IRF7303QTRPBF
IRF7303QTRPBF

International Rectifier

MOSFET

Data Sheet

Negotiable 
IRF7303Q
IRF7303Q

Other


Data Sheet

Negotiable 
IRF7303TR
IRF7303TR

International Rectifier

MOSFET 2N-CH 30V 4.9A 8-SOIC

Data Sheet

1-4000: $0.49
IRF7303TRPBF
IRF7303TRPBF

International Rectifier

MOSFET MOSFT DUAL NCh 30V 4.9A

Data Sheet

0-1: $0.72
1-25: $0.44
25-100: $0.30
100-250: $0.29