Product Summary

The FDN304P is a P-Channel 2.5V specified MOSFET. It uses a rugged gate version of Fairchild’s advanced PowerTrench process. The FDN304P has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications are Power management, Load switch and Battery protection.

Parametrics

FDN304P absolute maximum ratings: (1)VDSS Drain-Source Voltage –20 V; (2)VGSS Gate-Source Voltage ±12 V; (3)ID Drain Current–2.4 A; (4)Maximum Power Dissipation 0.46W; (5)TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150℃.

Features

FDN304P features: (1)–20 V, –2.4 A. RDS(ON) = 0.055Ω @ VGS = –4.5 V RDS(ON) = 0.080Ω @ VGS = –2.5 V; (2)Fast switching speed; (3)High performance trench technology for extremely low RDS(ON); (4)SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint.

Diagrams

FDN304P block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDN304P
FDN304P

Fairchild Semiconductor

MOSFET SSOT-3 P-CH 1.8V

Data Sheet

0-1: $0.31
1-25: $0.25
25-100: $0.18
100-250: $0.16
FDN304PZ
FDN304PZ

Fairchild Semiconductor

MOSFET P-Ch PowerTrench Specified 1.8V

Data Sheet

0-1: $0.32
1-25: $0.26
25-100: $0.18
100-250: $0.16
FDN304PZ_Q
FDN304PZ_Q

Fairchild Semiconductor

MOSFET P-Ch PowerTrench Specified 1.8V

Data Sheet

Negotiable