Product Summary
The 74AHCT1G08GV is a high-speed Si-gate CMOS device. The 74AHCT1G08GV provides the 2-input AND function.
Parametrics
74AHCT1G08GV absolute maximum ratings: (1)VCC supply voltage: -0.5 to +7.0 V; (2)VI input voltage: -0.5 to +7.0 V; (3)IIK input diode current VI<-0.5V: -20mA; (4)IOK output diode current VO<-0.5V or VO> VCC + 0.5V:±20mA; (5)IO output source or sink current -0.5V<VO<VCC + 0.5V:±25mA; (6)ICC VCC or GND current:±75mA; (7)Tstg storage temperature: -65 to +150℃; (8)PD power dissipation per package for temperature range from -40 to +125℃: 250mW.
Features
74AHCT1G08GV features: (1)Symmetrical output impedance; (2)High noise immunity; (3)ESD protection; (4)Low power dissipation; (5)Balanced propagation delays; (6)Very small 5-pin package; (7)Output capability: standard; (8)Specified from -40 to +125℃.
Diagrams
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![]() 74AHCT1G08GV,125 |
![]() NXP Semiconductors |
![]() Gates (AND / NAND / OR / NOR) SINGLE 2-INPUT AND GATE |
![]() Data Sheet |
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